Dr. Sulagna Chatterjee
Name: Dr. Sulagna Chatterjee
Qualification: Ph.D
Designation: Assistant Professor
Department: Department of Electronics and Communication Engineering
College address: Adamas University, Kolkata.
About Dr. Sulagna Chatterjee
Dr. Sulagna Chatterjee received a B.Sc. in Electronics Honours from Gokhale Memorial Girls’ College, University of Calcutta. She was awarded the National MERIT scholarship by Govt. Of India for her performance in B.Sc. Honours. She did her M.Sc. in Electronic Science from the department of Electronic Science, University of Calcutta. Then she did her M.Tech. in Radio Physics and Electronics from Institute of Radio Physics and Electronics, University of Calcutta, Raja Bazar Campus, where she stood FIRST CLASS FIRST and was AWARDED THE GOLD MEDAL and also was AWARDED Pareshlal Dhar Bhowmick Book Award for OUTSTANDING ACADEMIC EXCELLENCE by scoring a CGPA of 9.09. She won many prestigious fellowships for her Ph.D., namely, CSIR (Senior Research Fellow) (Govt. of India), Dept. of Science and Technology (DST) Scholarship (Govt. of India) and I.I.T. Institute Fellowship for Ph.D. in the Dept. of Electronics and Electrical Communication Engineering (I.I.T. Kharagpur). She has obtained her Ph.D. (Tech.) degree in Nano Science and Nano Technology, in April, 2019 from Centre for Research in Nanoscience and Nanotechnology, University of Calcutta. She is a REVIEWER for many esteemed international journals including Journal of Applied Physics, Journal of Materials and Design and many others having very high impact factors. She has also reviewed for reputed international journal in the field of applied mathematics. She is also an editorial board member for international journal of repute. Her research area is Strain and quantum modeling in semiconductor devices including nanowire FETs, FinFETs, UTB MOSFETs and also various Avalanche Transit Time (ATT) devices (like MITATT, IMPATT), Characterization of stress-free and stress-induced nanoscale FET devices using NEGF and modeling of their band structures, Nanoscale quantum confinement.